M.2

PV230-M280 (B+M Key)

M.2

PV230-M280 (B+M Key)

  • Low-Density Parity-Check (LDPC) Code
  • Global Wear-leveling
  • Flash Bad-block Management
  • End-to-End Data Protection
  • Flash Translation Layer: Page Mapping
  • DataDefender™
  • TRIM
  • Hyper Cache Technology
  • Over-provisioning
  • DataRAID
  • SMART Read Refresh
  • NVMe Secure Erase

PV230-M280 Impoves Power Efficiency and Ensures Stability

 

Apacer PV230-M280 offers full compliance with the PCIe Gen3 x2 interface and NVMe 1.3 specifications, delivering exceptionally low latency and outstanding data transfer performance. Its compact design makes it the ideal choice for larger and faster hosts deployed in a wide range of applications that require exceptional performance.

 

Outstanding performance with Apacer’s superior storage solutions:

  • Improved Power Efficiency: Utilize 3D NAND Technology and power management modes for greater power efficiency.
  • Enhanced Stability: Equipped with Sidefill Technology, enabling stable operation even in environments with high vibration and extreme temperature fluctuations.
  • Enhanced Security: Equipped with AES and TCG Opal 2.0 (optional) to safeguard against unauthorized access.

 

Equipped with advanced technologies support:

  • Low-Density Parity-Check (LDPC) Code: Enhance SSD endurance and data reliability.
  • Global Wear-leveling Technology: Ensure having lower erase counts to extend SSD lifespan.
  • Flash Bad-block Management: Manage cell blocks that fail over time.
  • End-to-End Data Protection: Protect sensitive data with comprehensive security.
  • Others: Page Mapping, DataDefender, TRIM, Hyper Cache Technology, Over-provisioning, DataRAID, SMART Read Refresh, NVMe Secure Erase and power saving modes.

 

With improved stability and enhanced power efficiency, PV230-M280 is the ideal storage or cache solution for a variety of applications, including rugged system application, IoT, manufacturing and transportation.

规格表
  • 型号
    PV230-M280
  • 介面
    PCIe Gen3 x2
  • 接口
    Single-sided M.2 2280-M
  • 板型
    M.2 2280
  • NAND 颗粒
    3D TLC
  • 容量
    120GB-1920GB
  • 外置DRAM
    No
  • 读取速度(MB/sec)
    Up to 1865
  • 写入速度(MB/sec)
    Up to 1675
  • ECC纠错功能
    Low-Density Parity-Check (LDPC) Code
  • IOPS (4K 随机写入)
    325K
  • 标准作业温度(°C)
    0 ~ 70
  • 最高作业温度(°C)
    -40 ~ 85
  • 放置温度(°C)
    -55 ~ 100
  • 外壳
    No
  • 温度感测功能
    Yes
  • 冲击耐力
    Operation: Acceleration, 50(G)/11(ms)/half sine (Compliant with MIL-STD-202G)
    Non-operation: Acceleration, 1500(G)/0.5(ms)/half sine (Compliant with MIL-STD-883K)
  • 震动耐力
    Operation:7.69 GRMS, 20~2000 Hz/random (Compliant with MIL-STD-810G)
    Non-operation:4.02 GRMS, 15~2000 Hz/random (Compliant with MIL-STD-810G)
  • 电压
    3.3V ±5%
  • 用电量
    Active Mode: 1,535 mA / Idle Mode: 130mA
  • 尺寸 (L x W x H )
    22.00 x 80.00 x 2.58 (max.)
  • MTBF (小时)
    >3,000,000

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